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Electrical and Switching Properties of Ge Se1.5  Tl0.1 thin Films

Abdalrhman Salem Alageli

Physics Department,Faculty of Education,

 ALGabal ALGharpy Univ., kekla ,Libya

ABSTRACT

Ge Se1.5Tl0.1 were prepared as a bulk material  by direct fusion of stiochoimetric proportions  of constituent elements. Then , Ge Se1.5Tl0,  thin films  were deposited under  vacuum on highly polished pyrographite  substrates by thermal evaporation. The obtained results for the temperature dependence of Ge Se1.5 Tl0.1 Thin film resistance were  taken at different film thicknesses (220,401,and 506 nm). The obtained value of  the calculated conduction activation energy is (0.72 eV) Static (I-V) characterstic curves were also obtained at room temperature for Ge Se1.5Tl0.1 amorphous thin films .The behavior of the obtained curves formed of low and high conduction branches following the load line of typical (I-V ) characterstic curve for a memory switch. The dynamic (I-V) characterstic for Ge Se1.5  Tl0.1  films were obtained by using an a.c source. The obtained dynamic (I-V) curve is also typical for a memory switch .

Key words: Electrical and Switching Properties ,  Ge Se1.5  Tl0.1 Thin Films.