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Electrical and Switching Properties of Ge Se1.5 Tl0.1 thin Films
Abdalrhman Salem Alageli
Physics Department,Faculty of Education,
ALGabal ALGharpy Univ., kekla ,Libya
Ge Se1.5Tl0.1 were prepared as a bulk material by direct fusion of stiochoimetric proportions of constituent elements. Then , Ge Se1.5Tl0, thin films were deposited under vacuum on highly polished pyrographite substrates by thermal evaporation. The obtained results for the temperature dependence of Ge Se1.5 Tl0.1 Thin film resistance were taken at different film thicknesses (220,401,and 506 nm). The obtained value of the calculated conduction activation energy is (0.72 eV) Static (I-V) characterstic curves were also obtained at room temperature for Ge Se1.5Tl0.1 amorphous thin films .The behavior of the obtained curves formed of low and high conduction branches following the load line of typical (I-V ) characterstic curve for a memory switch. The dynamic (I-V) characterstic for Ge Se1.5 Tl0.1 films were obtained by using an a.c source. The obtained dynamic (I-V) curve is also typical for a memory switch .
Key words: Electrical and Switching Properties , Ge Se1.5 Tl0.1 Thin Films.